| PART |
Description |
Maker |
| IRFP470 |
N-Channel Enhancement Mode MegaMOS FET
|
IXYS[IXYS Corporation]
ETC
|
| IXTH10N100 IXTH12N100 IXTM12N100 |
Discrete MOSFETs: Standard N-channel Types
MEGAMOS FET
|
IXYS Corporation
|
| IXTH30N50 |
MegaMOS FET 30 A, 500 V, 0.17 ohm, N-CHANNEL, Si, POWER, MOSFET, TO-247AD
Discrete MOSFETs: Standard N-channel Types
|
IXYS, Corp.
IXYS Corporation
|
| MMFT1N10E_D ON2216 MMFT1N10E MMFT1N10 |
MEDIUM POWER TMOS FET 1 AMP 100 VOLTS 1000 mA, 100 V, N-CHANNEL, Si, SMALL SIGNAL, MOSFET, TO-261AA
N-hannel Enhancement-ode Logic Level SOT23
From old datasheet system
|
Motorola Mobility Holdings, Inc.
ON Semi
MOTOROLA[Motorola, Inc]
|
| 0510-50A |
50 W, 28 V, 500-1000 MHz common emitter transistor
50 Watts, 28 Volts, Class AB Defcom 500 - 1000 MHz
TRANSISTOR | BJT | NPN | 60V V(BR)CEO | 3.7A I(C) | SOT-324VAR
晶体管|晶体管|叩| 60V的五（巴西）总裁| 3.7AI（丙）|的SOT - 324VAR
500-1000 MHz, Class AB, Common Emitter; fO (MHz): 1000; P(out) (W): 50; P(in) (W): 10; Gain (dB): 7; Vcc (V): 28; ICQ (A): 0.1; Case Style: 55AV-2
|
GHZTECH[GHz Technology]
MICROSEMI POWER PRODUCTS GROUP
|
| HER108G-AP HER103G HER107G HER101G |
1 A, 1000 V, SILICON, SIGNAL DIODE, DO-41 PLASTIC PACKAGE-2
1.0 Amp Glass Passivated High Efficient Rectifier 50 to 1000 Volts
|
Micro Commercial Components, Corp.
|
| T9G00410 T9G00412 T9G01010 T9G01012 T9G00110 T9G00 |
Phase Control SCR (1000-1200 Amperes Avg 100-2200 Volts) 第一阶段控制晶闸管（1000-1200安培平均100-2200伏特
|
Powerex Power Semicondu...
POWEREX[Powerex Power Semiconductors]
Powerex, Inc.
|
| 05110G0F 05110GOF |
Silicon Controlled Rectifier; Package: TO-65; IT (Av) (A): 50; VTM (V): 2.5; IH (mA): 200; VGT (V): 3; IGT (µA): 100000; Vrrm (V): 1000; 80 A, 1000 V, SCR, TO-208AC
|
Microsemi Corporation
Microsemi, Corp.
|
| MTP10N40 MTP10N40E ON2540 MTP10N40E-D |
TMOS E-FET High Energy Power FET N-Channel Enhancement-Mode Silicon Gate
TMOS POWER FET 10 AMPERES 400 VOLTS RDS(on) = 0.55 OHMS
From old datasheet system
|
ON Semiconductor
MOTOROLA[Motorola Inc]
MOTOROLA[Motorola, Inc]
|
